Quantum Effects for Spintronic Devices Optimization

Více o knize

Focusing on spin-dependent transport in magnetic nanostructures, this work aims to optimize magnetoresistive performance for high-density Magnetic Random Access Memories (MRAM). It reveals new resistive properties beneficial for Resistive Random Access Memories (ReRAM). The book is divided into two parts: the first discusses theoretical analysis of multilayered magnetic junctions with enhanced magnetoresistance, while the second explores experimental studies of magnetic granular multilayers, highlighting their resistive and capacitive switching properties along with a theoretical framework for charge transport.