Structural and electrical characterization of III-V semiconductor nanowires

The main image shows a contacted core-shell GaAs-AlGaAs nanowire with three individual top gates (upper fingers) in between the contacts (lower and outmost fingers) to probe the electrical properties of the nanowire spatially. A resulting transfer curve (gate voltage versus source-drain current) is plotted in the upper left image. At room temperature a sharp switching behavior is observed together with a high I(on)/I(off)-ratio. The lower right image presents a high resolution transmission electron micrograph of an InAs nanowire indicating a mixed wurtzite/zincblende stacking.