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InhaltsverzeichnisCharge-induced structural relaxation in hydrogenated amorphous silicon.- Magnetooptics of two-dimensional electrons under the conditions of integral and fractional quantum hall effect in Si-MOSFETs and GaAs-AlGaAs single heterojunctions.- Microwave investigations of the quantum hall effect in GaAs/AlGaAs heterostructures.- Recent developments in the theory of highly excited semiconductors.- The development of a 4 Mbit DRAM.- Fabrication and optical spectroscopy of ultra small III–V compound semiconductor structures.- Quasi-One-Dimensional electron systems on GaAs/AlGaAs heterojunctions.- On the theory of high Tc superconductors.
Nákup knihy
Festkörperprobleme, U. Rossler
- Jazyk
- Rok vydání
- 1989
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Doručení
Platební metody
Navrhnout úpravu
- Titul
- Festkörperprobleme
- Jazyk
- německy
- Autoři
- U. Rossler
- Vydavatel
- Springer
- Rok vydání
- 1989
- ISBN10
- 3662160943
- ISBN13
- 9783662160947
- Kategorie
- Fyzika
- Anotace
- InhaltsverzeichnisCharge-induced structural relaxation in hydrogenated amorphous silicon.- Magnetooptics of two-dimensional electrons under the conditions of integral and fractional quantum hall effect in Si-MOSFETs and GaAs-AlGaAs single heterojunctions.- Microwave investigations of the quantum hall effect in GaAs/AlGaAs heterostructures.- Recent developments in the theory of highly excited semiconductors.- The development of a 4 Mbit DRAM.- Fabrication and optical spectroscopy of ultra small III–V compound semiconductor structures.- Quasi-One-Dimensional electron systems on GaAs/AlGaAs heterojunctions.- On the theory of high Tc superconductors.