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Parametry
- 266 stránek
- 10 hodin čtení
Více o knize
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
Nákup knihy
Computational Microelectronics: Strain-Induced Effects in Advanced MOSFETs, Viktor Sverdlov, S. Selberherr
- Jazyk
- Rok vydání
- 2010
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- (pevná),
- Stav knihy
- Poškozená
- Cena
- 353 Kč
Doručení
Platební metody
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- Jazyk
- anglicky
- Autoři
- Viktor Sverdlov, S. Selberherr
- Vydavatel
- Springer
- Rok vydání
- 2010
- Vazba
- pevná
- Počet stran
- 266
- ISBN10
- 3709103819
- ISBN13
- 9783709103814
- Série
- Štítky
- Naučná literatura, Učebnice, Technologie & Průmysl, Vysokoškolské učebnice, Věda, Technologie, Elektronika & Elektrotechnika, Strojírenství, Elektronika
- Anotace
- Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.